Emetere, Moses and Bakeko, M. (2013) Determination of Characteristic Relaxation Times and Their Significance in A Copper Oxide Thin Film. Journal of Theoretical Physics and Cryptography, 4. pp. 1-4.
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Abstract
The copper oxide thin film was characterized using both the theoretical and experimental approach at different oxidation temperatures between 150oC to 450oC. Two experimental methodologies were combined with theore0cal model to inves0gate the effect of time relaxations on the samples. The time relaxation of the current predicted the suitability of the sample to be used to fabricate either solar cell or semiconductor. The time relaxation of the voltage showed the degree of disorderliness created within the sample during fabrication.
Item Type: | Article |
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Uncontrolled Keywords: | Disordered structures; amorphous and glassy solids, Specific materials: fabrication, treatment, testing, and analysis. |
Subjects: | Q Science > QA Mathematics > QA75 Electronic computers. Computer science Q Science > QC Physics |
Divisions: | Faculty of Engineering, Science and Mathematics > School of Physics |
Depositing User: | Mrs Patricia Nwokealisi |
Date Deposited: | 16 May 2018 13:59 |
Last Modified: | 16 May 2018 13:59 |
URI: | http://eprints.covenantuniversity.edu.ng/id/eprint/10810 |
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