Experimental Evidence of Quantum Confinement Impairment In The Optical Properties of Annealed Lead Sulphide Thin Film

Uno, U. E. and Emetere, Moses and Faluyi, E. S. and Gbenga, B. A. (2015) Experimental Evidence of Quantum Confinement Impairment In The Optical Properties of Annealed Lead Sulphide Thin Film. International Journal of Applied Engineering Research, 10 (7). pp. 17675-17683. ISSN 0973-4562

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Abstract

Recent characterizations of compounds are undoubtedly one of the avenues for the emergence of new semiconducting-light emitting diode (LED) devices. The industrial application of the lead sulphide thin film has been proposed. The lead sulphide thin film was grown by Chemical Bathe Deposition Technique (CBDT) and annealed at four temperatures of 100oC, 150oC, 200oC and 250oC. The samples were analyzed via the 6045 U-V spectrometer. The results shows that PbS thin film has a low transmittance value ranging from 0.204709% to 0.85722%; absorbance value ranging between 3.026% and 3.564%; reflectance value ranging from 81% to 114%; direct band gap was between 1.66eV to 1.78eV. Hence, the calculated refractive index ranges from 1.67 to 1.669. The evidence of quantum confinement impairment in each annealed samples was proofed. This shows that the optical tuning of the lead sulphide is dependent on the thermal control of its constituent's diameter

Item Type:	Article
Uncontrolled Keywords:	lead sulphide thin film, optical properties, quantum confinement, impairement, chalcogenide
Subjects:	Q Science > QC Physics
Divisions:	Faculty of Engineering, Science and Mathematics > School of Physics
Depositing User:	Mrs Patricia Nwokealisi
Date Deposited:	01 Jun 2018 11:16
Last Modified:	01 Jun 2018 11:16
URI:	http://eprints.covenantuniversity.edu.ng/id/eprint/10853

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