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On The Effect of Electron-Hole Recombination in Disordered GaAs-Aa1-xALAs Multi-quantum Well Structure

Uno, U. E. and Emetere, Moses and Isah, K. U. and Umaru, Ahmadu (2012) On The Effect of Electron-Hole Recombination in Disordered GaAs-Aa1-xALAs Multi-quantum Well Structure. International Journal of Fundamental Physical Sciences (IJFPS0, 2 (4). pp. 52-57. ISSN 2231-8186

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Abstract

The disordered electron-hole recombination in multi-quantum well was investigated using analytical method based on the rate equations. The results show extreme broad distribution of the recombination time which depends exponentially on the distances between the recombining excitons. The energies at each localised state shows an energy splitting between the electronic ground state and the first excited state of 0.0038eV.

Item Type: Article
Uncontrolled Keywords: Disordered structure, semiconductor, energy transition and hopping length
Subjects: Q Science > QC Physics
Divisions: Faculty of Engineering, Science and Mathematics > School of Physics
Depositing User: Mrs Patricia Nwokealisi
Date Deposited: 01 Jun 2018 11:25
Last Modified: 01 Jun 2018 11:25
URI: http://eprints.covenantuniversity.edu.ng/id/eprint/10854

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