Ojewande, Olasunkanmi and Ndujiuba, Charles Uzoanya and Adelakun, A. and Popoola, Segun I. and Atayero, A. A. (2020) Negative resistance amplifier circuit using GaAsFET modelled single MESFET. TELKOMNIKA Telecommunication, Computing, Electronics and Control, 18 (1). pp. 179-190. ISSN 1693-6930
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Abstract
Negative resistance devices have attracted much attention in the wireless communication industry because of their low cost, better performance, high speed, and reduced power requirements. Although negative resistance circuits are non-linear circuits, they are associated with distortion, which may either be amplitude-to-amplitude distortion or amplitude-to-phase distortion. In this paper, a unique way of realizing a negative resistance amplifier is proposed using a single metal-semiconductor field-effect transistor (MESFET). Intermodulation distortion test (IMD) is performed to evaluate the characteristic response of the negative resistance circuit amplifier to different bias voltages using the harmonic balance (HB) of the advanced designed software (ADS 2016). The results obtained are compared to those of a conventional distributed amplifier. The findings of this study showed that the negative resistance amplifier spreads over a wider frequency output with reduced power requirements while the conventional distributed amplifier has a direct current (DC) offset with output voltage of 32.34 dBm.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | Conventional distributed amplifier (CDA) Intermodulation distortion (IMD) Negative resistance amplifier Metal-semiconductor field-effect transistor (MESFET) |
| Subjects: | T Technology > T Technology (General) T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Faculty of Engineering, Science and Mathematics > School of Engineering Sciences |
| Depositing User: | nwokealisi |
| Date Deposited: | 06 Sep 2022 13:11 |
| Last Modified: | 06 Sep 2022 13:11 |
| URI: | http://eprints.covenantuniversity.edu.ng/id/eprint/16155 |
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