Influence of n-Mosfet transistor on dye-sensitized solar cell efficiency

Abodunrin, T.J and Boyo, A. O. and Usikalu, M.R. and Emetere, Moses and Ajayi, O. O. and Kotsedi, Chester and Nuru, Zebib and Malik, M and Oghonyon, J. G. (2018) Influence of n-Mosfet transistor on dye-sensitized solar cell efficiency. Heliyon.

PDF Download (942Kb)

Abstract

A new strategy for evaluating the efficiency of Dye sensitized Solar Cell (DSC) employed in this study was to introduce a device stabilizer which also functioned as an external load. This aim was accomplished through computations of efficiency of different DSCs based on n-Mosfet transistor. Transistor Z44 mosfet’s impact on the DSC systems was to significantly moderate the effect of two vital components namel; the photoanodes and electrolyte sensitizers. The outcome of the Z44 mosfet incorporation inside the DSC was a synchronization in photovoltaic spectral responses thereby, minimizing the common limitations of DSCs such as dye synergy, redox kinematics, photophysics and roughness factor which is not restrictive to N719 dyes. This study presents the results of indiumdoped tin oxide (ITO) conducting glass doped DSCs with different electrolytes enhanced with a transistor mosfet; short-circuit current density (Isc) of 0.104 A cm�2, open-circuit voltage (Voc) of 240.6 mV, efficiency of 0.9 % and a fill factor of 0.12 obtained under 1 atmospheric air mass conditions. The implication of this resA new strategy for evaluating the efficiency of Dye-sensitized Solar Cell (DSC) employed in this study was to introduce a device stabilizer which also functioned as an external load. This aim was accomplished through computations of efficiency of different DSCs based on n-Mosfet transistor. Transistor Z44 mosfet’s impact on the DSC systems was to significantly moderate the effect of two vital components namel; the photoanodes and electrolyte sensitizers. The outcome of the Z44 mosfet incorporation inside the DSC was a synchronization in photovoltaic spectral responses thereby, minimizing the common limitations of DSCs such as dye synergy, redox kinematics, photophysics and roughness factor which is not restrictive to N719 dyes. This study presents the results of indiumdoped tin oxide (ITO) conducting glass doped DSCs with different electrolytes enhanced with a transistor mosfet; short-circuit current density (Isc) of 0.104 A cm�2, open-circuit voltage (Voc) of 240.6 mV, efficiency of 0.9 % and a fill factor of 0.12 obtained under 1 atmospheric air mass conditions. The implication of this result is possible reproducibility and modelling of T. daniellii Mosfet DSC based on the comparative analysis of the output performance of T. danielliiult is possible reproducibility and modelling of T. daniellii Mosfet DSC based on the comparative analysis of the output performance of T. daniellii DSC on TiO2 and ZnO photoanode. This also gives impetus for further scientific inquiry.

Item Type:	Article
Uncontrolled Keywords:	Energy, Materials science, Natural product chemistry, Organic chemistry
Subjects:	Q Science > QA Mathematics Q Science > QC Physics T Technology > TJ Mechanical engineering and machinery
Divisions:	Faculty of Engineering, Science and Mathematics > School of Physics
Depositing User:	Mrs Hannah Akinwumi
Date Deposited:	15 Jan 2019 12:57
Last Modified:	15 Jan 2019 12:57
URI:	http://eprints.covenantuniversity.edu.ng/id/eprint/12287

Actions (login required)

View Item